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BPW83
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
FEATURES
* Package type: leaded * Package form: side view * Dimensions (L x W x H in mm): 5 x 3 x 6.4 * Radiant sensitive area (in mm2): 7.5 * High radiant sensitivity * Daylight blocking filter matched with 870 nm to 950 nm emitters * Fast response times * Angle of half sensitivity: = 65
94 8490
* Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC
with
DESCRIPTION
BPW83 is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters.
APPLICATIONS
* High speed detector for infrared radiation * Infrared remote control and free air data transmission systems, e.g. in combination with TSFFxxxx series IR emitters
PRODUCT SUMMARY
COMPONENT BPW83 Note Test condition see table "Basic Characteristics" Ira (A) 45 (deg) 65 0.5 (nm) 790 to 1050
ORDERING INFORMATION
ORDERING CODE BPW83 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM Side view
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t5s Connected with Cu wire, 0.14 mm2 Tamb 25 C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 215 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V mW C C C C K/W
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81530 Rev. 1.4, 08-Sep-08
BPW83
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Short circuit current Reverse light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Noise equivalent power Rise time Fall time Note Tamb = 25 C, unless otherwise specified VR = 10 V, = 870 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm TEST CONDITION IR = 100 A, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 870 nm Ee = 1 mW/cm2, = 870 nm Ee = 1 mW/cm2, = 870 nm, VR = 5 V SYMBOL V(BR) Iro CD CD Vo Ik Ira 43 MIN. 60 2 70 25 350 38 45 65 950 790 to 1050 4 x 10-14 100 100 40 30 TYP. MAX. UNIT V nA pF pF mV A A deg nm nm W/ Hz ns ns
p 0.5 NEP tr tf
BASIC CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
I ra rel - Relative Reverse Light Current
1000
Iro - Reverse Dark Current (nA)
1.4
1.2
100
VR = 5 V = 950 nm
1.0
10
0.8
VR = 10 V 1 20 40 60 80 100
0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (C)
94 8403
Tamb - Ambient Temperature (C)
94 8409
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81530 Rev. 1.4, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
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BPW83
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
1000
1.2
S()rel - Relative Spectral Sensivity
Ira - Reverse Light Current (A)
1.0 0.8 0.6 0.4 0.2 0.0 750
100
10
1
= 950 nm
VR = 5 V
0.1 0.01
94 8414
0.1
1
10
850
950
1050
1150
E e - Irradiance (mW/cm)
94 8426
- Wavelength (nm)
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0 100
10
20 30
I ra - Reverse Light Current (A)
Srel - Relative Radiant Sensitivity
1
mW/cm2
0.5 mW/cm2
40 1.0 0.9 0.8 50 60 70 80 0.6 0.4 0.2 0
= 950 nm
10
0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2
0.7
1 0.1
94 8415
1
10
100
94 8406
V R - Reverse Voltage (V)
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
80 CD - Diode Capacitance (pF)
60
E=0 f = 1 MHz
40
20
0 0.1
948407
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81530 Rev. 1.4, 08-Sep-08
- Angular Displacement
BPW83
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
A
C
technical drawings according to DIN specifications
5
- 0.2
0.3
3 - 0.2
Sensitive area (3.2)
(0.7)
0.2
- 0.8
9.3
7.2
0.2
6.4
20.2
< 0.65 1.5
< 0.7
Area not plane
0.45
0.05
0.95 0.2
2.54 nom.
0.4
0.05
Drawing-No.: 6.544-5109.01-4 Issue:1; 01.07.96
96 12196
Document Number: 81530 Rev. 1.4, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com 413
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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